A simply constructed lead phthalocyanine memory diode

Biswanath Mukherjee; Asim K. Ray; Ashwani K. Sharma; Mike Cook; Isabelle Chambrier

doi:10.1063/1.2903061

A simply constructed lead phthalocyanine memory diode

Biswanath Mukherjee, Asim K. Ray, Ashwani K. Sharma, Mike Cook, Isabelle Chambrier

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

Random-access memory switches were fabricated by using 70 nm thick spun films of nonperipherally octahexyl substituted lead phthalocyanine (PbPc) molecules sandwiched between indium tin oxide (ITO) substrates and vacuum-deposited aluminum (Al) top electrodes. The reproducible hysteresis behavior in terms of high and low conductance states was observed in the current-voltage characteristics recorded for the device at room temperature, and the on/off ratio for this single layered device was estimated to be as large as 10³. The bistable electrical switching effects were attributed to the existence of the depletion layer at the ITO/PbPc and energetically exponential distribution in energy of traps in nonactive region of PbPc films.

Original language	English
Article number	074507
Journal	Journal of Applied Physics
Volume	103
Issue number	7
DOIs	https://doi.org/10.1063/1.2903061
Publication status	Published - 9 Apr 2008

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10.1063/1.2903061

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title = "A simply constructed lead phthalocyanine memory diode",

abstract = "Random-access memory switches were fabricated by using 70 nm thick spun films of nonperipherally octahexyl substituted lead phthalocyanine (PbPc) molecules sandwiched between indium tin oxide (ITO) substrates and vacuum-deposited aluminum (Al) top electrodes. The reproducible hysteresis behavior in terms of high and low conductance states was observed in the current-voltage characteristics recorded for the device at room temperature, and the on/off ratio for this single layered device was estimated to be as large as 103. The bistable electrical switching effects were attributed to the existence of the depletion layer at the ITO/PbPc and energetically exponential distribution in energy of traps in nonactive region of PbPc films.",

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AU - Mukherjee, Biswanath

AU - Ray, Asim K.

AU - Sharma, Ashwani K.

AU - Cook, Mike

AU - Chambrier, Isabelle

PY - 2008/4/9

Y1 - 2008/4/9

N2 - Random-access memory switches were fabricated by using 70 nm thick spun films of nonperipherally octahexyl substituted lead phthalocyanine (PbPc) molecules sandwiched between indium tin oxide (ITO) substrates and vacuum-deposited aluminum (Al) top electrodes. The reproducible hysteresis behavior in terms of high and low conductance states was observed in the current-voltage characteristics recorded for the device at room temperature, and the on/off ratio for this single layered device was estimated to be as large as 103. The bistable electrical switching effects were attributed to the existence of the depletion layer at the ITO/PbPc and energetically exponential distribution in energy of traps in nonactive region of PbPc films.

AB - Random-access memory switches were fabricated by using 70 nm thick spun films of nonperipherally octahexyl substituted lead phthalocyanine (PbPc) molecules sandwiched between indium tin oxide (ITO) substrates and vacuum-deposited aluminum (Al) top electrodes. The reproducible hysteresis behavior in terms of high and low conductance states was observed in the current-voltage characteristics recorded for the device at room temperature, and the on/off ratio for this single layered device was estimated to be as large as 103. The bistable electrical switching effects were attributed to the existence of the depletion layer at the ITO/PbPc and energetically exponential distribution in energy of traps in nonactive region of PbPc films.

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