Abstract
The characteristics of bottom-gate bottom-contact organic thin film field-effect transistors (OTFTs) with 70 nm thick films of solution processed non-peripherallyoctahexyl-substituted nickeltetrabenzotriazaporphyrin(6NiTBTAP) molecules as active layers on silicon substrates are experimentally studied and the results are compared with the similary configured transistors using the corresponding nickel phthalocyanine (6NiPc) compound. 6NiTBTAP transistors are found to exhibit improved performance over 6NiPc transistors in terms of greater saturation hole mobility, two orders of magnitude higher on/off ratio and lower threshold voltage. This enhanced performance of 6NiTBTAP OTFTs over 6NiPc devices is attributed to improved surface morphology and large grain size of the active 6NiTBTAP film.
Original language | English |
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Pages (from-to) | 3086-3090 |
Number of pages | 5 |
Journal | ECS Journal of Solid State Science and Technology |
Volume | 4 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2015 |