Characterization of Sn-doped CuO thin films prepared by a sol–gel method

Jing Wu; K. S. Hui; K. N. Hui; Lei Li; Ho-Hwan Chun; Y. R. Cho

doi:10.1007/s10854-015-3945-8

Characterization of Sn-doped CuO thin films prepared by a sol–gel method

Jing Wu, K. S. Hui, K. N. Hui, Lei Li, Ho-Hwan Chun, Y. R. Cho

Research output: Contribution to journal › Article › peer-review

38 Citations (Scopus)

Abstract

This study examined the influence of the Sn doping concentration on the structural, electrical and optical properties of Sn-doped copper oxide (Sn:CuO) thin films synthesized on glass substrates using a facile sol–gel method. The samples were characterized by X-ray diffraction, energy dispersive X-ray analysis, scanning electron microscopy, Hall Effect measurements, and UV–visible spectroscopy. The carrier concentration, Hall mobility and resistivity of the Sn:CuO films were 9.14 × 10¹⁵–1.08 × 10¹⁶ cm⁻³, 6.14–10.5 cm²/Vs and 47.4–77.5 Ω cm, respectively. The crystallite size of the films decreased with increasing Sn content from 84.1 to 61.8 nm. The band gap trended downward from 2.0 to 1.95 eV with increasing Sn doping content. The results showed that SnO₂ doping strongly affects the structural, electrical and optical properties of the films.

Original language	English
Pages (from-to)	1719-1724
Number of pages	6
Journal	Journal of Materials Science: Materials in Electronics
Volume	27
Issue number	2
Early online date	18 Nov 2015
DOIs	https://doi.org/10.1007/s10854-015-3945-8
Publication status	Published - Feb 2016

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10.1007/s10854-015-3945-8

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title = "Characterization of Sn-doped CuO thin films prepared by a sol–gel method",

abstract = "This study examined the influence of the Sn doping concentration on the structural, electrical and optical properties of Sn-doped copper oxide (Sn:CuO) thin films synthesized on glass substrates using a facile sol–gel method. The samples were characterized by X-ray diffraction, energy dispersive X-ray analysis, scanning electron microscopy, Hall Effect measurements, and UV–visible spectroscopy. The carrier concentration, Hall mobility and resistivity of the Sn:CuO films were 9.14 × 1015–1.08 × 1016 cm−3, 6.14–10.5 cm2/Vs and 47.4–77.5 Ω cm, respectively. The crystallite size of the films decreased with increasing Sn content from 84.1 to 61.8 nm. The band gap trended downward from 2.0 to 1.95 eV with increasing Sn doping content. The results showed that SnO2 doping strongly affects the structural, electrical and optical properties of the films.",

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T1 - Characterization of Sn-doped CuO thin films prepared by a sol–gel method

AU - Wu, Jing

AU - Hui, K. S.

AU - Hui, K. N.

AU - Li, Lei

AU - Chun, Ho-Hwan

AU - Cho, Y. R.

PY - 2016/2

Y1 - 2016/2

N2 - This study examined the influence of the Sn doping concentration on the structural, electrical and optical properties of Sn-doped copper oxide (Sn:CuO) thin films synthesized on glass substrates using a facile sol–gel method. The samples were characterized by X-ray diffraction, energy dispersive X-ray analysis, scanning electron microscopy, Hall Effect measurements, and UV–visible spectroscopy. The carrier concentration, Hall mobility and resistivity of the Sn:CuO films were 9.14 × 1015–1.08 × 1016 cm−3, 6.14–10.5 cm2/Vs and 47.4–77.5 Ω cm, respectively. The crystallite size of the films decreased with increasing Sn content from 84.1 to 61.8 nm. The band gap trended downward from 2.0 to 1.95 eV with increasing Sn doping content. The results showed that SnO2 doping strongly affects the structural, electrical and optical properties of the films.

AB - This study examined the influence of the Sn doping concentration on the structural, electrical and optical properties of Sn-doped copper oxide (Sn:CuO) thin films synthesized on glass substrates using a facile sol–gel method. The samples were characterized by X-ray diffraction, energy dispersive X-ray analysis, scanning electron microscopy, Hall Effect measurements, and UV–visible spectroscopy. The carrier concentration, Hall mobility and resistivity of the Sn:CuO films were 9.14 × 1015–1.08 × 1016 cm−3, 6.14–10.5 cm2/Vs and 47.4–77.5 Ω cm, respectively. The crystallite size of the films decreased with increasing Sn content from 84.1 to 61.8 nm. The band gap trended downward from 2.0 to 1.95 eV with increasing Sn doping content. The results showed that SnO2 doping strongly affects the structural, electrical and optical properties of the films.

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JF - Journal of Materials Science: Materials in Electronics

SN - 0957-4522

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Characterization of Sn-doped CuO thin films prepared by a sol–gel method

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Oscar Hui

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Characterization of Sn-doped CuO thin films prepared by a sol–gel method

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