Double-resonance technique for C/V measurements of semiconductor devices

D. de Cogan, A. Alani

Research output: Contribution to journalArticle


A double-resonance technique has been developed for measuring the capacitance/voltage characteristics of junction semiconductor devices. It can be used in regions of forward bias where currently used methods are often unreliable.
Original languageEnglish
Pages (from-to)1153-1154
Number of pages2
JournalIEE Electronics Letters
Issue number24
Publication statusPublished - Nov 1985

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