Double-resonance technique for C/V measurements of semiconductor devices

D. de Cogan; A. Alani

doi:10.1049/el:19850816

Double-resonance technique for C/V measurements of semiconductor devices

D. de Cogan, A. Alani

School of Computing Sciences

Research output: Contribution to journal › Article

Abstract

A double-resonance technique has been developed for measuring the capacitance/voltage characteristics of junction semiconductor devices. It can be used in regions of forward bias where currently used methods are often unreliable.

Original language	English
Pages (from-to)	1153-1154
Number of pages	2
Journal	IEE Electronics Letters
Volume	21
Issue number	24
DOIs	https://doi.org/10.1049/el:19850816
Publication status	Published - Nov 1985

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10.1049/el:19850816

Cite this

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title = "Double-resonance technique for C/V measurements of semiconductor devices",

abstract = "A double-resonance technique has been developed for measuring the capacitance/voltage characteristics of junction semiconductor devices. It can be used in regions of forward bias where currently used methods are often unreliable.",

author = "{de Cogan}, D. and A. Alani",

year = "1985",

month = nov,

doi = "10.1049/el:19850816",

language = "English",

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pages = "1153--1154",

journal = "IEE Electronics Letters",

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AU - Alani, A.

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DO - 10.1049/el:19850816

M3 - Article

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