TY - JOUR
T1 - Effect of oxygen partial pressure contents on the properties of Al-doped ZnO thin films prepared by radio frequency sputtering
AU - Hwang, Dong-Hyun
AU - Ahn, Jung-Hoon
AU - Hui, Kwan-Nam
AU - Hui, Kwan-San
AU - Son, Young-Guk
PY - 2011
Y1 - 2011
N2 - Al-doped Zinc Oxide (AZO) films were deposited on glass substrates by radio frequency (R.F.) magnetron sputtering technique. The properties of the films were controlled by adjusting the oxygen flow contents as a mixture of Ar and O2 gases. The structural, electrical and optical properties of the films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), a UV-visible spectrometer, as well as Hall effect measurements. Results revealed that a film deposited with an oxygen partial pressure content of 0% had a hexagonal structure, a strongly preferred orientation with the c-axis perpendicular to the substrate and the lowest resistivity of about 6.9 × 10-4 Ω cm. The optical transmittance spectra showed more than 80% transmittance in the visible region, and the band gap was found to be direct. Strong violet emission located at 2.96 eV was observed in the AZO films deposited with an oxygen partial pressure content of 0%.
AB - Al-doped Zinc Oxide (AZO) films were deposited on glass substrates by radio frequency (R.F.) magnetron sputtering technique. The properties of the films were controlled by adjusting the oxygen flow contents as a mixture of Ar and O2 gases. The structural, electrical and optical properties of the films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), a UV-visible spectrometer, as well as Hall effect measurements. Results revealed that a film deposited with an oxygen partial pressure content of 0% had a hexagonal structure, a strongly preferred orientation with the c-axis perpendicular to the substrate and the lowest resistivity of about 6.9 × 10-4 Ω cm. The optical transmittance spectra showed more than 80% transmittance in the visible region, and the band gap was found to be direct. Strong violet emission located at 2.96 eV was observed in the AZO films deposited with an oxygen partial pressure content of 0%.
KW - Al-doped ZnO film
KW - Magnetron sputtering
KW - Oxygen partial pressure
UR - http://www.scopus.com/inward/record.url?scp=79961007836&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:79961007836
SN - 1229-9162
VL - 12
SP - 150
EP - 154
JO - Journal of Ceramic Processing Research
JF - Journal of Ceramic Processing Research
IS - 2
ER -