Electrical and optical properties of composite transparent conducting oxide thin films

K. S. Hui; L. Li; J. Y. Lee; H. W. Park; P. K. Song; Y. R. Cho; H. S. Lee; K. N. Hui

Electrical and optical properties of composite transparent conducting oxide thin films

K. S. Hui, L. Li, J. Y. Lee, H. W. Park, P. K. Song, Y. R. Cho, H. S. Lee, K. N. Hui

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A single layer composite transparent conducting oxide films (NiO:AZO) was successfully synthesized by a simple and low cost sol-gel solution method. The results indicated that the enhancement of conductivity could be achieved by annealing the NiO:AZO films in N₂/H₂ forming gas. P-type conductivity of NiO:AZO film with resistivity of 1.24×10^-3 Ωcm, p-type carrier concentration of 4.09×10²⁰ cm ^-3, and a Hall mobility of 12.7 cm²/Vs were obtained when molar ratio of NiO is 1.5%. This study opens the possibility of developing high conductive p-type composite transparent conducting oxide for optoelectronics devices.

Original language	English
Title of host publication	ICCM International Conferences on Composite Materials
Publisher	ICCM
Publication status	Published - 2011
Event	18th International Conference on Composites Materials - Jeju, South Korea Duration: 21 Aug 2011 → 26 Aug 2011

Conference

Conference	18th International Conference on Composites Materials
Abbreviated title	ICCM 2011
Country/Territory	South Korea
City	Jeju
Period	21/08/11 → 26/08/11

Keywords

Nickel oxide
Sol-gel
Transparent conducting oxide
Zinc oxide

Cite this

@inproceedings{52cd5415d41b46a682bdfdcb96c2f979,

title = "Electrical and optical properties of composite transparent conducting oxide thin films",

abstract = "A single layer composite transparent conducting oxide films (NiO:AZO) was successfully synthesized by a simple and low cost sol-gel solution method. The results indicated that the enhancement of conductivity could be achieved by annealing the NiO:AZO films in N2/H2 forming gas. P-type conductivity of NiO:AZO film with resistivity of 1.24×10-3 Ωcm, p-type carrier concentration of 4.09×1020 cm -3, and a Hall mobility of 12.7 cm2/Vs were obtained when molar ratio of NiO is 1.5%. This study opens the possibility of developing high conductive p-type composite transparent conducting oxide for optoelectronics devices.",

keywords = "Nickel oxide, Sol-gel, Transparent conducting oxide, Zinc oxide",

author = "Hui, {K. S.} and L. Li and Lee, {J. Y.} and Park, {H. W.} and Song, {P. K.} and Cho, {Y. R.} and Lee, {H. S.} and Hui, {K. N.}",

year = "2011",

language = "English",

booktitle = "ICCM International Conferences on Composite Materials",

publisher = "ICCM",

note = "18th International Conference on Composites Materials, ICCM 2011 ; Conference date: 21-08-2011 Through 26-08-2011",

}

TY - GEN

T1 - Electrical and optical properties of composite transparent conducting oxide thin films

AU - Hui, K. S.

AU - Li, L.

AU - Lee, J. Y.

AU - Park, H. W.

AU - Song, P. K.

AU - Cho, Y. R.

AU - Lee, H. S.

AU - Hui, K. N.

PY - 2011

Y1 - 2011

N2 - A single layer composite transparent conducting oxide films (NiO:AZO) was successfully synthesized by a simple and low cost sol-gel solution method. The results indicated that the enhancement of conductivity could be achieved by annealing the NiO:AZO films in N2/H2 forming gas. P-type conductivity of NiO:AZO film with resistivity of 1.24×10-3 Ωcm, p-type carrier concentration of 4.09×1020 cm -3, and a Hall mobility of 12.7 cm2/Vs were obtained when molar ratio of NiO is 1.5%. This study opens the possibility of developing high conductive p-type composite transparent conducting oxide for optoelectronics devices.

AB - A single layer composite transparent conducting oxide films (NiO:AZO) was successfully synthesized by a simple and low cost sol-gel solution method. The results indicated that the enhancement of conductivity could be achieved by annealing the NiO:AZO films in N2/H2 forming gas. P-type conductivity of NiO:AZO film with resistivity of 1.24×10-3 Ωcm, p-type carrier concentration of 4.09×1020 cm -3, and a Hall mobility of 12.7 cm2/Vs were obtained when molar ratio of NiO is 1.5%. This study opens the possibility of developing high conductive p-type composite transparent conducting oxide for optoelectronics devices.

KW - Nickel oxide

KW - Sol-gel

KW - Transparent conducting oxide

KW - Zinc oxide

UR - http://www.scopus.com/inward/record.url?scp=84875921744&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84875921744

BT - ICCM International Conferences on Composite Materials

PB - ICCM

T2 - 18th International Conference on Composites Materials

Y2 - 21 August 2011 through 26 August 2011

ER -

Electrical and optical properties of composite transparent conducting oxide thin films

Abstract

Conference

Keywords

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