Electromechanical field analysis of PN junctions in bent composite piezoelectric semiconductor beams under shear forces

Decai Liu, Kai Fang, Peng Li, Dianzi Liu, Zhenghua Qian

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In piezotronics, PN junctions usually possess both piezoelectricity and semiconductor properties. This allows them to be manipulated mechanically by external forces through the coupling between deformation and free carriers. For a conventional non-piezoelectric PN junction, however, the mechanical manipulation seems difficult to achieve. In this paper, we theoretically demonstrate that this problem may be addressed via structural design. A composite beam model consisting of a piezoelectric dielectric layer and two non-piezoelectric PN junction layers is proposed. Then its electromechanical response under three different types of shear loads is examined based on a one-dimensional phenomenological theory. Results show as expected that the electrical behaviors of the junction can be tuned mechanically when the external force is applied on the interface, which provides a new idea for the design of piezotronic devices. Further, the effects of the doping level, thickness ratio, and material combination are also investigated, providing a comprehensive understanding of the proposed composite model.
Original languageEnglish
JournalActa Mechanica
Early online date26 Nov 2023
Publication statusPublished - 26 Nov 2023

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