Enhanced light extraction efficiency of GaN-based LED with ZnO nanorod grown on Ga-doped ZnO seed layer

Kwun Nam Hui; Kwan San Hui; Qixun Xia; Tran Viet Cuong; Young-Rae Cho; Jai Singh; Pushpendra Kumar; Eui Jung Kim

doi:10.1149/2.005306ssl

Enhanced light extraction efficiency of GaN-based LED with ZnO nanorod grown on Ga-doped ZnO seed layer

Kwun Nam Hui, Kwan San Hui, Qixun Xia, Tran Viet Cuong, Young-Rae Cho, Jai Singh, Pushpendra Kumar, Eui Jung Kim

Energy Materials Laboratory

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

High density and narrow zinc oxide nanorod (ZnO NR) arrays (aspect ratio ?18.9) were hydrothermally grown on gallium-doped ZnO (GZO) seed layer (3 wt% Ga-doping). Light-emitting diode (LED) fabricated with ZnO NR arrays grown on GZO seed showed marked 19% and 70% increases in light output power at 20 mA of driving current compared to that of LED with ZnO NR arrays grown on ZnO seed layer and reference LED. The significant enhancement of light output power is attributed to high density and surface-to-volume ratios of NR arrays as well as to enhanced multiple photons scattering at the NR surface.

Original language	English
Article number	Q43
Journal	ECS Solid State Letters
Volume	2
Issue number	6
DOIs	https://doi.org/10.1149/2.005306ssl
Publication status	Published - 16 Mar 2013

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title = "Enhanced light extraction efficiency of GaN-based LED with ZnO nanorod grown on Ga-doped ZnO seed layer",

abstract = "High density and narrow zinc oxide nanorod (ZnO NR) arrays (aspect ratio ?18.9) were hydrothermally grown on gallium-doped ZnO (GZO) seed layer (3 wt% Ga-doping). Light-emitting diode (LED) fabricated with ZnO NR arrays grown on GZO seed showed marked 19% and 70% increases in light output power at 20 mA of driving current compared to that of LED with ZnO NR arrays grown on ZnO seed layer and reference LED. The significant enhancement of light output power is attributed to high density and surface-to-volume ratios of NR arrays as well as to enhanced multiple photons scattering at the NR surface.",

author = "Hui, {Kwun Nam} and Hui, {Kwan San} and Qixun Xia and Cuong, {Tran Viet} and Young-Rae Cho and Jai Singh and Pushpendra Kumar and Kim, {Eui Jung}",

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T1 - Enhanced light extraction efficiency of GaN-based LED with ZnO nanorod grown on Ga-doped ZnO seed layer

AU - Hui, Kwun Nam

AU - Hui, Kwan San

AU - Xia, Qixun

AU - Cuong, Tran Viet

AU - Cho, Young-Rae

AU - Singh, Jai

AU - Kumar, Pushpendra

AU - Kim, Eui Jung

PY - 2013/3/16

Y1 - 2013/3/16

N2 - High density and narrow zinc oxide nanorod (ZnO NR) arrays (aspect ratio ?18.9) were hydrothermally grown on gallium-doped ZnO (GZO) seed layer (3 wt% Ga-doping). Light-emitting diode (LED) fabricated with ZnO NR arrays grown on GZO seed showed marked 19% and 70% increases in light output power at 20 mA of driving current compared to that of LED with ZnO NR arrays grown on ZnO seed layer and reference LED. The significant enhancement of light output power is attributed to high density and surface-to-volume ratios of NR arrays as well as to enhanced multiple photons scattering at the NR surface.

AB - High density and narrow zinc oxide nanorod (ZnO NR) arrays (aspect ratio ?18.9) were hydrothermally grown on gallium-doped ZnO (GZO) seed layer (3 wt% Ga-doping). Light-emitting diode (LED) fabricated with ZnO NR arrays grown on GZO seed showed marked 19% and 70% increases in light output power at 20 mA of driving current compared to that of LED with ZnO NR arrays grown on ZnO seed layer and reference LED. The significant enhancement of light output power is attributed to high density and surface-to-volume ratios of NR arrays as well as to enhanced multiple photons scattering at the NR surface.

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JO - ECS Solid State Letters

JF - ECS Solid State Letters

SN - 2162-8742

IS - 6

M1 - Q43

ER -

Enhanced light extraction efficiency of GaN-based LED with ZnO nanorod grown on Ga-doped ZnO seed layer

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