A proof-of-concept of applying laser micro-machining to fabricate high performance GaN light-emitting diode (LED) was presented in this study. Laser micro-machining was applied to fabricate GaN LED chip with angled sidewalls (ALED). The inclined sapphire sidewalls were coated with highly reflective silver film which functions as an efficient light out-coupling medium for photons within the LED structure. Thus, more laterally-propagating photons can be redirected to the upward direction of the ALED with silver coating (Ag-ALED). Performances of the Ag-ALED, ALED and conventional planar GaN LED were evaluated. At an injection current of 30 mA, the light output intensity of Ag-ALED was significantly improved by 97% and 195% as compared to ALED and conventional planar LED, respectively. The corresponding wall-plug efficiency of Ag-ALED was remarkably increased by 95% and 193% as compared to ALED and conventional planar LED, respectively. The results of this study demonstrated that the Ag-ALED showed a pronounced increase in light output intensity compared to conventional planar LED, which may have many potential applications in the field of display engineering.
- Gallium nitride
- High light extraction efficiency
- Inclined sidewalls
- Light-emitting diodes