Enhancement of the photoluminescence properties of Ba1.98SiO4−δN2/3δ: Eu0.02 phosphors and their application to green LEDs

Shuo Wang, K. S. Hui, K. N. Hui, S. Sambasivam, X. L. Zhang, Y. R. Cho, In-Hong Kim, Woo-Jin Lee, Kwangseuk Kyhm, Jung-Chul Park

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A green emitting Ba1.98SiO4−δN2/3δ:Eu0.02 phosphor with an appreciable intensity was synthesized using the gas-reduction–nitridation (GRN) method. SEM revealed agglomerated Ba1.98SiO4−δN2/3δ:Eu0.02 particles with irregular morphologies and a primary particle size of 1–2.5 μm. The phosphor showed emission lines of Eu2+ corresponding to the 4f65d1 → 4f7 transition under 370 nm excitation. As the GRN process was conducted to incorporate N3− into the lattice, both the excitation and emission intensity of Ba1.98SiO4−δN2/3δ:Eu0.02 were enhanced greatly compared to Ba1.98SiO4:Eu0.02. The decay time of Ba1.98SiO4−δN2/3δ:Eu0.02 showed that N entered the Ba1.98SiO4:Eu0.02 lattices to replace O to form a NO point defect. The electroluminescence intensity of Ba1.98SiO4−δN2/3δ:Eu0.02 at 503 nm increased with increasing forward bias current. Intense green LEDs were fabricated by coating the synthesized phosphors on the cap of the near-ultraviolet InGaN LEDs (λem = 375 nm). Overall, this phosphor appears to be a promising candidate for solid-state lighting applications.

Original languageEnglish
Pages (from-to)2809-2815
Number of pages7
JournalJournal of Materials Science: Materials in Electronics
Issue number3
Early online date24 Nov 2015
Publication statusPublished - Mar 2016

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