High quality p-type N-doped AZO nanorod arrays by an ammonia-assisted hydrothermal method

Q. X. Xia, K. S. Hui, K. N. Hui, D. H. Hwang, Jai Singh, Y. R. Cho, S. K. Lee, W. Zhou, Z. P. Wan, Chi-Nhan Ha Thuc, Y. G. Son

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Abstract

High quality Al-N co-doped ZnO (AZO:N) nanorods were synthesized using an ammonia-assisted hydrothermal method. The AZO:N nanorods exhibited p-type characteristics according to Hall Effect measurements, revealing low resistivity in the order of 10 - 2 Ωcm. At room temperature, the electrical properties of the AZO:N nanorod showed a hole concentration, hole mobility and resistivity of 2.83 × 10 18-2.28 × 10 19 cm - 3, 2.19-2.86 cm 2/Vs, and 1.01-9.58 × 10 - 2 Ωcm, respectively. The I-V measurements of the p-n junction (p-AZO:N nanorods/n-Si) showed rectifying I-V characteristics, confirming that these AZO:N nanorods exhibit p-type conductivity. This study opens the possibility of developing highly conducting p-type AZO nanorods for optoelectronic devices. The effect of the ammonia concentration on the structural and electrical properties of AZO:N nanorods is discussed.

Original languageEnglish
Pages (from-to)180-183
Number of pages4
JournalMaterials Letters
Volume78
Early online date22 Mar 2012
DOIs
Publication statusPublished - 1 Jul 2012

Keywords

  • Al-doped ZnO
  • Ammonia-assisted
  • Hydrothermal growth
  • Nanorods
  • p-Type

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