High quality Al-N co-doped ZnO (AZO:N) nanorods were synthesized using an ammonia-assisted hydrothermal method. The AZO:N nanorods exhibited p-type characteristics according to Hall Effect measurements, revealing low resistivity in the order of 10 - 2 Ωcm. At room temperature, the electrical properties of the AZO:N nanorod showed a hole concentration, hole mobility and resistivity of 2.83 × 10 18-2.28 × 10 19 cm - 3, 2.19-2.86 cm 2/Vs, and 1.01-9.58 × 10 - 2 Ωcm, respectively. The I-V measurements of the p-n junction (p-AZO:N nanorods/n-Si) showed rectifying I-V characteristics, confirming that these AZO:N nanorods exhibit p-type conductivity. This study opens the possibility of developing highly conducting p-type AZO nanorods for optoelectronic devices. The effect of the ammonia concentration on the structural and electrical properties of AZO:N nanorods is discussed.
- Al-doped ZnO
- Hydrothermal growth