Abstract
High quality Al-N co-doped ZnO (AZO:N) nanorods were synthesized using an ammonia-assisted hydrothermal method. The AZO:N nanorods exhibited p-type characteristics according to Hall Effect measurements, revealing low resistivity in the order of 10 - 2 Ωcm. At room temperature, the electrical properties of the AZO:N nanorod showed a hole concentration, hole mobility and resistivity of 2.83 × 10 18-2.28 × 10 19 cm - 3, 2.19-2.86 cm 2/Vs, and 1.01-9.58 × 10 - 2 Ωcm, respectively. The I-V measurements of the p-n junction (p-AZO:N nanorods/n-Si) showed rectifying I-V characteristics, confirming that these AZO:N nanorods exhibit p-type conductivity. This study opens the possibility of developing highly conducting p-type AZO nanorods for optoelectronic devices. The effect of the ammonia concentration on the structural and electrical properties of AZO:N nanorods is discussed.
Original language | English |
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Pages (from-to) | 180-183 |
Number of pages | 4 |
Journal | Materials Letters |
Volume | 78 |
Early online date | 22 Mar 2012 |
DOIs | |
Publication status | Published - 1 Jul 2012 |
Keywords
- Al-doped ZnO
- Ammonia-assisted
- Hydrothermal growth
- Nanorods
- p-Type