In-situ electrical resistance measurement for determining minimum continuous thickness of Sn films by DC magnetron sputtering

Se-Hun Kwon, Na-Hyun Kwon, Pung-Keun Song, Kwun Nam Hui, Kwan-San Hui, Young-Rae Cho

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4 Citations (Scopus)


Sn thin films were grown by DC magnetron sputtering on a soda-lime glass and Si substrate. The in-situ electrical resistance of the films was measured during the film growth. The minimum continuous thickness of the films was difficult to determine by using the conventional plot of R × d 2 versus d and could only be approximately calculated to be near 20 to 25 nm. On the other hand, a new empirical method using the plot of R × d 3 versus d gave a value of 16 nm for the minimum continuous Sn film thickness. The minimum continuous thickness of Sn films obtained from field-emission scanning electron microscopy and X-ray photoemission spectroscopy analyses was 16 nm. The new empirical method proposed here has the potential to determine the exact minimum continuous thickness of the films.

Original languageEnglish
Pages (from-to)62-64
Number of pages3
JournalMaterials Letters
Early online date10 Jan 2012
Publication statusPublished - 15 Apr 2012


  • Crystal growth
  • Electronic materials
  • Nanomaterials
  • Sputtering
  • Thin films

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