Low resistivity of Ni-Al co-doped ZnO thin films deposited by DC magnetron sputtering at low sputtering power

JongWoo Lee; K. N. Hui; K.S. Hui; Y. R. Cho; Ho-Hwan Chun

doi:10.1016/j.apsusc.2013.12.071

Low resistivity of Ni-Al co-doped ZnO thin films deposited by DC magnetron sputtering at low sputtering power

JongWoo Lee, K. N. Hui, K.S. Hui, Y. R. Cho, Ho-Hwan Chun

Research output: Contribution to journal › Article › peer-review

36 Citations (Scopus)

Abstract

Ni-Al co-doped ZnO (NiAl:ZnO) thin films were deposited on glass substrates by DC magnetron sputtering in Ar using a single ceramic, spark-plasma-sintered target with 2 wt% Al and 5 wt% Ni. The effects of the sputtering power and gas pressure on the NiAl:ZnO films were studied. The structural, electrical, and optical properties of the films were characterized by X-ray diffraction, field emission scanning electron microscopy, Hall effect measurements and UV-vis transmission spectroscopy. As the sputtering power and gas pressure increased, the crystallinity, electrical properties and optical band gap of the films were improved. The NiAl:ZnO film deposited at 40 W at 6.0 mTorr had the strongest (0 0 2) XRD peak and the lowest resistivity of approximately 2.19 × 10 ^-3 Ω cm with an optical transmittance of 90%.

Original language	English
Pages (from-to)	55-61
Number of pages	7
Journal	Applied Surface Science
Volume	293
Early online date	20 Dec 2013
DOIs	https://doi.org/10.1016/j.apsusc.2013.12.071
Publication status	Published - 28 Feb 2014

Keywords

Al-doped ZnO
DC magnetron sputtering
Electrical properties
NiO
Transparent conducting oxide

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10.1016/j.apsusc.2013.12.071

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title = "Low resistivity of Ni-Al co-doped ZnO thin films deposited by DC magnetron sputtering at low sputtering power",

abstract = "Ni-Al co-doped ZnO (NiAl:ZnO) thin films were deposited on glass substrates by DC magnetron sputtering in Ar using a single ceramic, spark-plasma-sintered target with 2 wt% Al and 5 wt% Ni. The effects of the sputtering power and gas pressure on the NiAl:ZnO films were studied. The structural, electrical, and optical properties of the films were characterized by X-ray diffraction, field emission scanning electron microscopy, Hall effect measurements and UV-vis transmission spectroscopy. As the sputtering power and gas pressure increased, the crystallinity, electrical properties and optical band gap of the films were improved. The NiAl:ZnO film deposited at 40 W at 6.0 mTorr had the strongest (0 0 2) XRD peak and the lowest resistivity of approximately 2.19 × 10 -3 Ω cm with an optical transmittance of 90%.",

keywords = "Al-doped ZnO, DC magnetron sputtering, Electrical properties, NiO, Transparent conducting oxide",

author = "JongWoo Lee and Hui, {K. N.} and K.S. Hui and Cho, {Y. R.} and Ho-Hwan Chun",

year = "2014",

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day = "28",

doi = "10.1016/j.apsusc.2013.12.071",

language = "English",

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pages = "55--61",

journal = "Applied Surface Science",

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T1 - Low resistivity of Ni-Al co-doped ZnO thin films deposited by DC magnetron sputtering at low sputtering power

AU - Lee, JongWoo

AU - Hui, K. N.

AU - Hui, K.S.

AU - Cho, Y. R.

AU - Chun, Ho-Hwan

PY - 2014/2/28

Y1 - 2014/2/28

N2 - Ni-Al co-doped ZnO (NiAl:ZnO) thin films were deposited on glass substrates by DC magnetron sputtering in Ar using a single ceramic, spark-plasma-sintered target with 2 wt% Al and 5 wt% Ni. The effects of the sputtering power and gas pressure on the NiAl:ZnO films were studied. The structural, electrical, and optical properties of the films were characterized by X-ray diffraction, field emission scanning electron microscopy, Hall effect measurements and UV-vis transmission spectroscopy. As the sputtering power and gas pressure increased, the crystallinity, electrical properties and optical band gap of the films were improved. The NiAl:ZnO film deposited at 40 W at 6.0 mTorr had the strongest (0 0 2) XRD peak and the lowest resistivity of approximately 2.19 × 10 -3 Ω cm with an optical transmittance of 90%.

AB - Ni-Al co-doped ZnO (NiAl:ZnO) thin films were deposited on glass substrates by DC magnetron sputtering in Ar using a single ceramic, spark-plasma-sintered target with 2 wt% Al and 5 wt% Ni. The effects of the sputtering power and gas pressure on the NiAl:ZnO films were studied. The structural, electrical, and optical properties of the films were characterized by X-ray diffraction, field emission scanning electron microscopy, Hall effect measurements and UV-vis transmission spectroscopy. As the sputtering power and gas pressure increased, the crystallinity, electrical properties and optical band gap of the films were improved. The NiAl:ZnO film deposited at 40 W at 6.0 mTorr had the strongest (0 0 2) XRD peak and the lowest resistivity of approximately 2.19 × 10 -3 Ω cm with an optical transmittance of 90%.

KW - Al-doped ZnO

KW - DC magnetron sputtering

KW - Electrical properties

KW - NiO

KW - Transparent conducting oxide

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DO - 10.1016/j.apsusc.2013.12.071

M3 - Article

AN - SCOPUS:84895062926

VL - 293

SP - 55

EP - 61

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

ER -

Low resistivity of Ni-Al co-doped ZnO thin films deposited by DC magnetron sputtering at low sputtering power

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Oscar Hui

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Low resistivity of Ni-Al co-doped ZnO thin films deposited by DC magnetron sputtering at low sputtering power

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Oscar Hui

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