TY - JOUR
T1 - Low resistivity of Ni-Al co-doped ZnO thin films deposited by DC magnetron sputtering at low sputtering power
AU - Lee, JongWoo
AU - Hui, K. N.
AU - Hui, K.S.
AU - Cho, Y. R.
AU - Chun, Ho-Hwan
PY - 2014/2/28
Y1 - 2014/2/28
N2 - Ni-Al co-doped ZnO (NiAl:ZnO) thin films were deposited on glass substrates by DC magnetron sputtering in Ar using a single ceramic, spark-plasma-sintered target with 2 wt% Al and 5 wt% Ni. The effects of the sputtering power and gas pressure on the NiAl:ZnO films were studied. The structural, electrical, and optical properties of the films were characterized by X-ray diffraction, field emission scanning electron microscopy, Hall effect measurements and UV-vis transmission spectroscopy. As the sputtering power and gas pressure increased, the crystallinity, electrical properties and optical band gap of the films were improved. The NiAl:ZnO film deposited at 40 W at 6.0 mTorr had the strongest (0 0 2) XRD peak and the lowest resistivity of approximately 2.19 × 10 -3 Ω cm with an optical transmittance of 90%.
AB - Ni-Al co-doped ZnO (NiAl:ZnO) thin films were deposited on glass substrates by DC magnetron sputtering in Ar using a single ceramic, spark-plasma-sintered target with 2 wt% Al and 5 wt% Ni. The effects of the sputtering power and gas pressure on the NiAl:ZnO films were studied. The structural, electrical, and optical properties of the films were characterized by X-ray diffraction, field emission scanning electron microscopy, Hall effect measurements and UV-vis transmission spectroscopy. As the sputtering power and gas pressure increased, the crystallinity, electrical properties and optical band gap of the films were improved. The NiAl:ZnO film deposited at 40 W at 6.0 mTorr had the strongest (0 0 2) XRD peak and the lowest resistivity of approximately 2.19 × 10 -3 Ω cm with an optical transmittance of 90%.
KW - Al-doped ZnO
KW - DC magnetron sputtering
KW - Electrical properties
KW - NiO
KW - Transparent conducting oxide
UR - http://www.scopus.com/inward/record.url?scp=84895062926&partnerID=8YFLogxK
U2 - 10.1016/j.apsusc.2013.12.071
DO - 10.1016/j.apsusc.2013.12.071
M3 - Article
AN - SCOPUS:84895062926
SN - 0169-4332
VL - 293
SP - 55
EP - 61
JO - Applied Surface Science
JF - Applied Surface Science
ER -