Abstract
Ni-Al co-doped ZnO (NiAl:ZnO) thin films were deposited on glass substrates by DC magnetron sputtering in Ar using a single ceramic, spark-plasma-sintered target with 2 wt% Al and 5 wt% Ni. The effects of the sputtering power and gas pressure on the NiAl:ZnO films were studied. The structural, electrical, and optical properties of the films were characterized by X-ray diffraction, field emission scanning electron microscopy, Hall effect measurements and UV-vis transmission spectroscopy. As the sputtering power and gas pressure increased, the crystallinity, electrical properties and optical band gap of the films were improved. The NiAl:ZnO film deposited at 40 W at 6.0 mTorr had the strongest (0 0 2) XRD peak and the lowest resistivity of approximately 2.19 × 10 -3 Ω cm with an optical transmittance of 90%.
Original language | English |
---|---|
Pages (from-to) | 55-61 |
Number of pages | 7 |
Journal | Applied Surface Science |
Volume | 293 |
Early online date | 20 Dec 2013 |
DOIs | |
Publication status | Published - 28 Feb 2014 |
Keywords
- Al-doped ZnO
- DC magnetron sputtering
- Electrical properties
- NiO
- Transparent conducting oxide
Profiles
-
Oscar Hui
- School of Engineering - Reader in Energy Storage & Conversion
- Emerging Technologies for Electric Vehicles (EV) - Member
- Energy Materials Laboratory - Member
- ClimateUEA - Member
Person: Member, Research Group Member, Academic, Teaching & Research