Low resistivity p-type Zn1-xAlxO: Cu2O composite transparent conducting oxide thin film fabricated by sol-gel method

K. N. Hui, K. S. Hui, Lei Li, Y. R. Cho, Jai Singh

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12 Citations (Scopus)

Abstract

Highly transparent Cu2O-doped p-type Zn1-xAl xO (AZO; Al/Zn = 1.5 at%) conducting oxide films were synthesized on glass substrates using a cost effective low temperature sol-gel method. X-ray diffraction of the Cu2O-doped AZO (AZO:Cu2O) films revealed a polycrystalline Cu2O (1 1 0) peak. The I-V measurements of the p-n junction (ITO/AZO:Cu2O) revealed rectifying I-V characteristics, showing that these AZO:Cu2O films exhibit p-type conductivity. p-Type conductivity was achieved by annealing the AZO:Cu 2O films in N2/H2 forming gas at 400 °C. The hole concentration, hole mobility and resistivity of the 0.5-2 mol% AZO:Cu2O films were 5.41 × 1018 to 1.99 × 1020 cm-3, 8.36-21.6 cm2/V s and 1.66 × 10-2 to 6.94 × 10-3 Ω cm, respectively. These results show that post-annealing in a forming gas is effective and practicable in producing p-type AZO.

Original languageEnglish
Pages (from-to)96-100
Number of pages5
JournalMaterials Research Bulletin
Volume48
Issue number1
Early online date12 Oct 2012
DOIs
Publication statusPublished - Jan 2013

Keywords

  • A. Semiconductors
  • A. Thin films
  • B. Chemical synthesis
  • D. Electrical properties
  • D. Optical properties

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