Low resistivity p-type Zn1-xAlxO: Cu2O composite transparent conducting oxide thin film fabricated by sol-gel method

K. N. Hui; K. S. Hui; Lei Li; Y. R. Cho; Jai Singh

doi:10.1016/j.materresbull.2012.10.013

Low resistivity p-type Zn_1-xAl_xO: Cu₂O composite transparent conducting oxide thin film fabricated by sol-gel method

K. N. Hui, K. S. Hui, Lei Li, Y. R. Cho, Jai Singh

Energy Materials Laboratory

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

Highly transparent Cu₂O-doped p-type Zn_1-xAl _xO (AZO; Al/Zn = 1.5 at%) conducting oxide films were synthesized on glass substrates using a cost effective low temperature sol-gel method. X-ray diffraction of the Cu₂O-doped AZO (AZO:Cu₂O) films revealed a polycrystalline Cu₂O (1 1 0) peak. The I-V measurements of the p-n junction (ITO/AZO:Cu₂O) revealed rectifying I-V characteristics, showing that these AZO:Cu₂O films exhibit p-type conductivity. p-Type conductivity was achieved by annealing the AZO:Cu ₂O films in N₂/H₂ forming gas at 400 °C. The hole concentration, hole mobility and resistivity of the 0.5-2 mol% AZO:Cu₂O films were 5.41 × 10¹⁸ to 1.99 × 10²⁰ cm^-3, 8.36-21.6 cm²/V s and 1.66 × 10^-2 to 6.94 × 10^-3 Ω cm, respectively. These results show that post-annealing in a forming gas is effective and practicable in producing p-type AZO.

Original language	English
Pages (from-to)	96-100
Number of pages	5
Journal	Materials Research Bulletin
Volume	48
Issue number	1
Early online date	12 Oct 2012
DOIs	https://doi.org/10.1016/j.materresbull.2012.10.013
Publication status	Published - Jan 2013

Keywords

A. Semiconductors
A. Thin films
B. Chemical synthesis
D. Electrical properties
D. Optical properties

Access to Document

10.1016/j.materresbull.2012.10.013

Cite this

@article{f39bb78db11244a8907f591703bad366,

title = "Low resistivity p-type Zn1-xAlxO: Cu2O composite transparent conducting oxide thin film fabricated by sol-gel method",

abstract = "Highly transparent Cu2O-doped p-type Zn1-xAl xO (AZO; Al/Zn = 1.5 at%) conducting oxide films were synthesized on glass substrates using a cost effective low temperature sol-gel method. X-ray diffraction of the Cu2O-doped AZO (AZO:Cu2O) films revealed a polycrystalline Cu2O (1 1 0) peak. The I-V measurements of the p-n junction (ITO/AZO:Cu2O) revealed rectifying I-V characteristics, showing that these AZO:Cu2O films exhibit p-type conductivity. p-Type conductivity was achieved by annealing the AZO:Cu 2O films in N2/H2 forming gas at 400 °C. The hole concentration, hole mobility and resistivity of the 0.5-2 mol% AZO:Cu2O films were 5.41 × 1018 to 1.99 × 1020 cm-3, 8.36-21.6 cm2/V s and 1.66 × 10-2 to 6.94 × 10-3 Ω cm, respectively. These results show that post-annealing in a forming gas is effective and practicable in producing p-type AZO.",

keywords = "A. Semiconductors, A. Thin films, B. Chemical synthesis, D. Electrical properties, D. Optical properties",

author = "Hui, {K. N.} and Hui, {K. S.} and Lei Li and Cho, {Y. R.} and Jai Singh",

year = "2013",

month = jan,

doi = "10.1016/j.materresbull.2012.10.013",

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T2 - Cu2O composite transparent conducting oxide thin film fabricated by sol-gel method

AU - Hui, K. N.

AU - Hui, K. S.

AU - Li, Lei

AU - Cho, Y. R.

AU - Singh, Jai

PY - 2013/1

Y1 - 2013/1

N2 - Highly transparent Cu2O-doped p-type Zn1-xAl xO (AZO; Al/Zn = 1.5 at%) conducting oxide films were synthesized on glass substrates using a cost effective low temperature sol-gel method. X-ray diffraction of the Cu2O-doped AZO (AZO:Cu2O) films revealed a polycrystalline Cu2O (1 1 0) peak. The I-V measurements of the p-n junction (ITO/AZO:Cu2O) revealed rectifying I-V characteristics, showing that these AZO:Cu2O films exhibit p-type conductivity. p-Type conductivity was achieved by annealing the AZO:Cu 2O films in N2/H2 forming gas at 400 °C. The hole concentration, hole mobility and resistivity of the 0.5-2 mol% AZO:Cu2O films were 5.41 × 1018 to 1.99 × 1020 cm-3, 8.36-21.6 cm2/V s and 1.66 × 10-2 to 6.94 × 10-3 Ω cm, respectively. These results show that post-annealing in a forming gas is effective and practicable in producing p-type AZO.

AB - Highly transparent Cu2O-doped p-type Zn1-xAl xO (AZO; Al/Zn = 1.5 at%) conducting oxide films were synthesized on glass substrates using a cost effective low temperature sol-gel method. X-ray diffraction of the Cu2O-doped AZO (AZO:Cu2O) films revealed a polycrystalline Cu2O (1 1 0) peak. The I-V measurements of the p-n junction (ITO/AZO:Cu2O) revealed rectifying I-V characteristics, showing that these AZO:Cu2O films exhibit p-type conductivity. p-Type conductivity was achieved by annealing the AZO:Cu 2O films in N2/H2 forming gas at 400 °C. The hole concentration, hole mobility and resistivity of the 0.5-2 mol% AZO:Cu2O films were 5.41 × 1018 to 1.99 × 1020 cm-3, 8.36-21.6 cm2/V s and 1.66 × 10-2 to 6.94 × 10-3 Ω cm, respectively. These results show that post-annealing in a forming gas is effective and practicable in producing p-type AZO.

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KW - A. Thin films

KW - B. Chemical synthesis

KW - D. Electrical properties

KW - D. Optical properties

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