TY - JOUR
T1 - Microstructural, optical, and electrical properties of Ni-Al co-doped ZnO films prepared by DC magnetron sputtering
AU - Jo, Young Dae
AU - Hui, K. N.
AU - Hui, K.S.
AU - Cho, Y. R.
AU - Kim, Kwang Ho
PY - 2014/3
Y1 - 2014/3
N2 - Ni-Al co-doped ZnO (NiAl:ZnO) films with fixed Al content at 2 wt% and different Ni contents (2.5, 3, and 5 wt%) were deposited by DC magnetron sputtering in an argon atmosphere at room temperature. X-ray diffraction revealed that all films showed a highly preferential (0 0 2) c-axis orientation. XPS revealed the presence of metallic Ni, NiO, and Ni2O3 states, and Ni atoms were successfully doped in NiAl:ZnO films, which did not result in a change in ZnO crystal structure and orientation. The electrical resistivity of NiAl:ZnO film was decreased to 2.59 × 10-3 Ω cm at a Ni doping concentration of 3 wt% compared with undoped Al-doped ZnO film (5.58 × 10-3 Ω cm). The mean optical transmittance in the visible range was greater than 80% for all films. Band gap widening (4.18 eV) was observed in the NiAl:ZnO films with 5 wt% Ni, attributed to the Burstein-Moss shift due to the increase of carrier concentration.
AB - Ni-Al co-doped ZnO (NiAl:ZnO) films with fixed Al content at 2 wt% and different Ni contents (2.5, 3, and 5 wt%) were deposited by DC magnetron sputtering in an argon atmosphere at room temperature. X-ray diffraction revealed that all films showed a highly preferential (0 0 2) c-axis orientation. XPS revealed the presence of metallic Ni, NiO, and Ni2O3 states, and Ni atoms were successfully doped in NiAl:ZnO films, which did not result in a change in ZnO crystal structure and orientation. The electrical resistivity of NiAl:ZnO film was decreased to 2.59 × 10-3 Ω cm at a Ni doping concentration of 3 wt% compared with undoped Al-doped ZnO film (5.58 × 10-3 Ω cm). The mean optical transmittance in the visible range was greater than 80% for all films. Band gap widening (4.18 eV) was observed in the NiAl:ZnO films with 5 wt% Ni, attributed to the Burstein-Moss shift due to the increase of carrier concentration.
KW - A. Composites
KW - A. Thin films
KW - B. Sputtering
KW - C. X-ray diffraction
KW - D. Optical properties
UR - http://www.scopus.com/inward/record.url?scp=84892576952&partnerID=8YFLogxK
U2 - 10.1016/j.materresbull.2013.12.026
DO - 10.1016/j.materresbull.2013.12.026
M3 - Article
AN - SCOPUS:84892576952
SN - 0025-5408
VL - 51
SP - 345
EP - 350
JO - Materials Research Bulletin
JF - Materials Research Bulletin
ER -