Abstract
Ni-Al co-doped ZnO (NiAl:ZnO) films with fixed Al content at 2 wt% and different Ni contents (2.5, 3, and 5 wt%) were deposited by DC magnetron sputtering in an argon atmosphere at room temperature. X-ray diffraction revealed that all films showed a highly preferential (0 0 2) c-axis orientation. XPS revealed the presence of metallic Ni, NiO, and Ni2O3 states, and Ni atoms were successfully doped in NiAl:ZnO films, which did not result in a change in ZnO crystal structure and orientation. The electrical resistivity of NiAl:ZnO film was decreased to 2.59 × 10-3 Ω cm at a Ni doping concentration of 3 wt% compared with undoped Al-doped ZnO film (5.58 × 10-3 Ω cm). The mean optical transmittance in the visible range was greater than 80% for all films. Band gap widening (4.18 eV) was observed in the NiAl:ZnO films with 5 wt% Ni, attributed to the Burstein-Moss shift due to the increase of carrier concentration.
Original language | English |
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Pages (from-to) | 345-350 |
Number of pages | 6 |
Journal | Materials Research Bulletin |
Volume | 51 |
Early online date | 19 Dec 2013 |
DOIs | |
Publication status | Published - Mar 2014 |
Keywords
- A. Composites
- A. Thin films
- B. Sputtering
- C. X-ray diffraction
- D. Optical properties
Profiles
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Oscar Hui
- School of Engineering - Reader in Energy Storage & Conversion
- Emerging Technologies for Electric Vehicles (EV) - Member
- Energy Materials Laboratory - Member
- ClimateUEA - Member
Person: Member, Research Group Member, Academic, Teaching & Research