Negative differential resistance effects in spun films of substituted phthalocyanine derivatives

Satyajit Sahu; Ashwani K. Sharma; Mike Cook; Asim K. Ray

doi:10.1007/s10854-009-9958-4

Negative differential resistance effects in spun films of substituted phthalocyanine derivatives

Satyajit Sahu, Ashwani K. Sharma, Mike Cook, Asim K. Ray

School of Chemistry

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Spun films of novel substituted lead phthalocyanine derivatives between aluminum and indium tin oxide electrodes exhibit large, reproducible negative differential resistance (NDR) in their current–voltage characteristics and can be electrically switched between a high conductance on state and a low conductance off state. Space charge limited conduction mechanism was identified from temperature dependent measurements to be responsible for charge transport. The NDR effect may be due to the charge storage in the structure near the electrodes.

Original language	English
Pages (from-to)	567-570
Number of pages	4
Journal	Journal of Materials Science: Materials in Electronics
Volume	21
Issue number	6
DOIs	https://doi.org/10.1007/s10854-009-9958-4
Publication status	Published - 2010

Access to Document

10.1007/s10854-009-9958-4

Cite this

@article{e304b4e2aa954d3b8a90bdb41fc6d453,

title = "Negative differential resistance effects in spun films of substituted phthalocyanine derivatives",

abstract = "Spun films of novel substituted lead phthalocyanine derivatives between aluminum and indium tin oxide electrodes exhibit large, reproducible negative differential resistance (NDR) in their current–voltage characteristics and can be electrically switched between a high conductance on state and a low conductance off state. Space charge limited conduction mechanism was identified from temperature dependent measurements to be responsible for charge transport. The NDR effect may be due to the charge storage in the structure near the electrodes.",

author = "Satyajit Sahu and Sharma, {Ashwani K.} and Mike Cook and Ray, {Asim K.}",

year = "2010",

doi = "10.1007/s10854-009-9958-4",

language = "English",

volume = "21",

pages = "567--570",

journal = "Journal of Materials Science: Materials in Electronics",

issn = "0957-4522",

publisher = "Springer",

number = "6",

}

TY - JOUR

T1 - Negative differential resistance effects in spun films of substituted phthalocyanine derivatives

AU - Sahu, Satyajit

AU - Sharma, Ashwani K.

AU - Cook, Mike

AU - Ray, Asim K.

PY - 2010

Y1 - 2010

N2 - Spun films of novel substituted lead phthalocyanine derivatives between aluminum and indium tin oxide electrodes exhibit large, reproducible negative differential resistance (NDR) in their current–voltage characteristics and can be electrically switched between a high conductance on state and a low conductance off state. Space charge limited conduction mechanism was identified from temperature dependent measurements to be responsible for charge transport. The NDR effect may be due to the charge storage in the structure near the electrodes.

AB - Spun films of novel substituted lead phthalocyanine derivatives between aluminum and indium tin oxide electrodes exhibit large, reproducible negative differential resistance (NDR) in their current–voltage characteristics and can be electrically switched between a high conductance on state and a low conductance off state. Space charge limited conduction mechanism was identified from temperature dependent measurements to be responsible for charge transport. The NDR effect may be due to the charge storage in the structure near the electrodes.

U2 - 10.1007/s10854-009-9958-4

DO - 10.1007/s10854-009-9958-4

M3 - Article

VL - 21

SP - 567

EP - 570

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

SN - 0957-4522

IS - 6

ER -