Rapid subsurface damage detection of SiC using inductivity coupled plasma

Yi Zhang, Linfeng Zhang, Keyu Chen, Dianzi Liu, Dong Lu, Hui Deng

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Abstract

This paper proposes a method for the rapid detection of subsurface damage (SSD) of SiC using atmospheric inductivity coupled plasma. As a plasma etching method operated at ambient pressure with no bias voltage, this method does not introduce any new SSD to the substrate. Plasma diagnosis and simulation are used to optimize the detection operation. Assisted by an SiC cover, a taper can be etched on the substrate with a high material removal rate. Confocal laser scanning microscopy and scanning electron microscope are used to analyze the etching results, and scanning transmission electron microscope (STEM) is adopted to confirm the accuracy of this method. The STEM result also indicates that etching does not introduce any SSD, and the thoroughly etched surface is a perfectly single crystal. A rapid SSD screening ability is also demonstrated, showing that this method is a promising approach for the rapid detection of SSD.

Original languageEnglish
Article number035202
JournalInternational Journal of Extreme Manufacturing
Volume3
Issue number3
Early online date24 May 2021
DOIs
Publication statusPublished - Jul 2021

Keywords

  • ICP etching
  • SSD detection
  • Silicon carbide
  • Subsurface damage

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