Synthesis and characterization of NiO-doped p-type AZO films fabricated by sol-gel method

Lei Li, K. S. Hui, K. N. Hui, H. W. Park, D. H. Hwang, Shinho Cho, S. K. Lee, P. K. Song, Y. R. Cho, Heesoo Lee, Y. G. Son, W. Zhou

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Abstract

NiO-doped p-type AZO (Al/Zn = 1.5 at.%) films were synthesized on glass substrates using a simple and low cost sol-gel solution method. p-type conductivity could be achieved by annealing the NiO:AZO films in N 2/H 2 forming gas at 550 °C. The real Al/Zn and Ni/Zn ratio, hole concentration, hole mobility and resistivity of the 1.5-2 mol% NiO-doped AZO films were 0.26-0.29, 0.06-0.09, 3.15 × 10 18-2.18 × 10 20 cm - 3, 2.33-12.76 cm 2/Vs, and 2.39 × 10 - 1-1.24 × 10 - 2 ω cm, respectively. I-V measurements of the p-n junction (ITO/NiO:AZO) revealed rectifying I-V characteristics, confirming that these NiO:AZO films exhibit p-type conductivity. This study opens the possibility of developing highly conductive p-type composite transparent conducting oxides for optoelectronic devices.

Original languageEnglish
Pages (from-to)283-286
Number of pages4
JournalMaterials Letters
Volume68
Early online date30 Oct 2011
DOIs
Publication statusPublished - 1 Feb 2012

Keywords

  • Al-doped ZnO
  • NiO
  • p-type
  • Sol-gel method
  • Transparent conducting oxide

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