Synthesis and characterization of NiO-doped p-type AZO films fabricated by sol-gel method

Lei Li; K. S. Hui; K. N. Hui; H. W. Park; D. H. Hwang; Shinho Cho; S. K. Lee; P. K. Song; Y. R. Cho; Heesoo Lee; Y. G. Son; W. Zhou

doi:10.1016/j.matlet.2011.10.089

Synthesis and characterization of NiO-doped p-type AZO films fabricated by sol-gel method

Lei Li, K. S. Hui, K. N. Hui, H. W. Park, D. H. Hwang, Shinho Cho, S. K. Lee, P. K. Song, Y. R. Cho, Heesoo Lee, Y. G. Son, W. Zhou

Energy Materials Laboratory

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

Abstract

NiO-doped p-type AZO (Al/Zn = 1.5 at.%) films were synthesized on glass substrates using a simple and low cost sol-gel solution method. p-type conductivity could be achieved by annealing the NiO:AZO films in N ₂/H ₂ forming gas at 550 °C. The real Al/Zn and Ni/Zn ratio, hole concentration, hole mobility and resistivity of the 1.5-2 mol% NiO-doped AZO films were 0.26-0.29, 0.06-0.09, 3.15 × 10 ¹⁸-2.18 × 10 ²⁰ cm ^{- 3}, 2.33-12.76 cm ²/Vs, and 2.39 × 10 ^{- 1}-1.24 × 10 ^{- 2} ω cm, respectively. I-V measurements of the p-n junction (ITO/NiO:AZO) revealed rectifying I-V characteristics, confirming that these NiO:AZO films exhibit p-type conductivity. This study opens the possibility of developing highly conductive p-type composite transparent conducting oxides for optoelectronic devices.

Original language	English
Pages (from-to)	283-286
Number of pages	4
Journal	Materials Letters
Volume	68
Early online date	30 Oct 2011
DOIs	https://doi.org/10.1016/j.matlet.2011.10.089
Publication status	Published - 1 Feb 2012

Keywords

Al-doped ZnO
NiO
p-type
Sol-gel method
Transparent conducting oxide

Access to Document

10.1016/j.matlet.2011.10.089

Cite this

@article{1db2c69f7ea043fd853b93040734a4d2,

title = "Synthesis and characterization of NiO-doped p-type AZO films fabricated by sol-gel method",

abstract = "NiO-doped p-type AZO (Al/Zn = 1.5 at.%) films were synthesized on glass substrates using a simple and low cost sol-gel solution method. p-type conductivity could be achieved by annealing the NiO:AZO films in N 2/H 2 forming gas at 550 °C. The real Al/Zn and Ni/Zn ratio, hole concentration, hole mobility and resistivity of the 1.5-2 mol% NiO-doped AZO films were 0.26-0.29, 0.06-0.09, 3.15 × 10 18-2.18 × 10 20 cm - 3, 2.33-12.76 cm 2/Vs, and 2.39 × 10 - 1-1.24 × 10 - 2 ω cm, respectively. I-V measurements of the p-n junction (ITO/NiO:AZO) revealed rectifying I-V characteristics, confirming that these NiO:AZO films exhibit p-type conductivity. This study opens the possibility of developing highly conductive p-type composite transparent conducting oxides for optoelectronic devices.",

keywords = "Al-doped ZnO, NiO, p-type, Sol-gel method, Transparent conducting oxide",

author = "Lei Li and Hui, {K. S.} and Hui, {K. N.} and Park, {H. W.} and Hwang, {D. H.} and Shinho Cho and Lee, {S. K.} and Song, {P. K.} and Cho, {Y. R.} and Heesoo Lee and Son, {Y. G.} and W. Zhou",

year = "2012",

month = feb,

day = "1",

doi = "10.1016/j.matlet.2011.10.089",

language = "English",

volume = "68",

pages = "283--286",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier",

}

TY - JOUR

T1 - Synthesis and characterization of NiO-doped p-type AZO films fabricated by sol-gel method

AU - Li, Lei

AU - Hui, K. S.

AU - Hui, K. N.

AU - Park, H. W.

AU - Hwang, D. H.

AU - Cho, Shinho

AU - Lee, S. K.

AU - Song, P. K.

AU - Cho, Y. R.

AU - Lee, Heesoo

AU - Son, Y. G.

AU - Zhou, W.

PY - 2012/2/1

Y1 - 2012/2/1

N2 - NiO-doped p-type AZO (Al/Zn = 1.5 at.%) films were synthesized on glass substrates using a simple and low cost sol-gel solution method. p-type conductivity could be achieved by annealing the NiO:AZO films in N 2/H 2 forming gas at 550 °C. The real Al/Zn and Ni/Zn ratio, hole concentration, hole mobility and resistivity of the 1.5-2 mol% NiO-doped AZO films were 0.26-0.29, 0.06-0.09, 3.15 × 10 18-2.18 × 10 20 cm - 3, 2.33-12.76 cm 2/Vs, and 2.39 × 10 - 1-1.24 × 10 - 2 ω cm, respectively. I-V measurements of the p-n junction (ITO/NiO:AZO) revealed rectifying I-V characteristics, confirming that these NiO:AZO films exhibit p-type conductivity. This study opens the possibility of developing highly conductive p-type composite transparent conducting oxides for optoelectronic devices.

AB - NiO-doped p-type AZO (Al/Zn = 1.5 at.%) films were synthesized on glass substrates using a simple and low cost sol-gel solution method. p-type conductivity could be achieved by annealing the NiO:AZO films in N 2/H 2 forming gas at 550 °C. The real Al/Zn and Ni/Zn ratio, hole concentration, hole mobility and resistivity of the 1.5-2 mol% NiO-doped AZO films were 0.26-0.29, 0.06-0.09, 3.15 × 10 18-2.18 × 10 20 cm - 3, 2.33-12.76 cm 2/Vs, and 2.39 × 10 - 1-1.24 × 10 - 2 ω cm, respectively. I-V measurements of the p-n junction (ITO/NiO:AZO) revealed rectifying I-V characteristics, confirming that these NiO:AZO films exhibit p-type conductivity. This study opens the possibility of developing highly conductive p-type composite transparent conducting oxides for optoelectronic devices.

KW - Al-doped ZnO

KW - NiO

KW - p-type

KW - Sol-gel method

KW - Transparent conducting oxide

UR - http://www.scopus.com/inward/record.url?scp=81255166208&partnerID=8YFLogxK

U2 - 10.1016/j.matlet.2011.10.089

DO - 10.1016/j.matlet.2011.10.089

M3 - Article

AN - SCOPUS:81255166208

VL - 68

SP - 283

EP - 286

JO - Materials Letters

JF - Materials Letters

SN - 0167-577X

ER -

Synthesis and characterization of NiO-doped p-type AZO films fabricated by sol-gel method

Abstract

Keywords

Access to Document

Other files and links

Cite this