Thermally induced decomposition of single-wall carbon nanotubes adsorbed on H/Si(111)

Michael R. C. Hunt, Massimo Montalti, Yimin Chao, Satheesh Krishnamurthy, Vinod R. Dhanak, Lidija Šiller

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Abstract

The thermally driven reaction of carbon nanotubes with a silicon substrate is studied by photoemission spectroscopy and atomic force microscopy. Carbon nanotubes with a relatively high defect density are observed to decompose under reaction with silicon to form silicon carbide at temperatures (650+/-10 degreesC) substantially lower than the analogous reaction for adsorbed C-60. The morphology of the resultant silicon carbide islands appears to reflect the morphology of the original nanotubes, suggesting a means by which SiC nanostrutures may be produced. (C) 2002 American Institute of Physics.
Original languageEnglish
Pages (from-to)4847-4849
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number25
DOIs
Publication statusPublished - 2002

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