The thermally driven reaction of carbon nanotubes with a silicon substrate is studied by photoemission spectroscopy and atomic force microscopy. Carbon nanotubes with a relatively high defect density are observed to decompose under reaction with silicon to form silicon carbide at temperatures (650+/-10 degreesC) substantially lower than the analogous reaction for adsorbed C-60. The morphology of the resultant silicon carbide islands appears to reflect the morphology of the original nanotubes, suggesting a means by which SiC nanostrutures may be produced. (C) 2002 American Institute of Physics.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 2002|