Triazine-based graphitic carbon nitride: a two-dimensional semiconductor

Gerardo Algara-Siller; Nikolai Severin; Samantha Y. Chong; Torbjörn Björkman; Robert G. Palgrave; Andrea Laybourn; Markus Antonietti; Yaroslav Z. Khimyak; Arkady V. Krasheninnikov; Jürgen P. Rabe; Ute Kaiser; Andrew I. Cooper; Arne Thomas; Michael J. Bojdys

doi:10.1002/anie.201402191

Triazine-based graphitic carbon nitride: a two-dimensional semiconductor

Gerardo Algara-Siller, Nikolai Severin, Samantha Y. Chong, Torbjörn Björkman, Robert G. Palgrave, Andrea Laybourn, Markus Antonietti, Yaroslav Z. Khimyak, Arkady V. Krasheninnikov, Jürgen P. Rabe, Ute Kaiser, Andrew I. Cooper, Arne Thomas, Michael J. Bojdys

Physical Chemistry and Pharmaceutics

Research output: Contribution to journal › Article › peer-review

616 Citations (Scopus)

Abstract

Graphitic carbon nitride has been predicted to be structurally analogous to carbon-only graphite, yet with an inherent bandgap. We have grown, for the first time, macroscopically large crystalline thin films of triazine-based, graphitic carbon nitride (TGCN) using an ionothermal, interfacial reaction starting with the abundant monomer dicyandiamide. The films consist of stacked, two-dimensional (2D) crystals between a few and several hundreds of atomic layers in thickness. Scanning force and transmission electron microscopy show long-range, in-plane order, while optical spectroscopy, X-ray photoelectron spectroscopy, and density functional theory calculations corroborate a direct bandgap between 1.6 and 2.0 eV. Thus TGCN is of interest for electronic devices, such as field-effect transistors and light-emitting diodes.

Original language	English
Pages (from-to)	7450-7455
Number of pages	6
Journal	Angewandte Chemie-International Edition
Volume	53
Issue number	29
Early online date	18 May 2014
DOIs	https://doi.org/10.1002/anie.201402191
Publication status	Published - 14 Jul 2014

Keywords

carbon nitride
graphene
semiconductor
thin films

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10.1002/anie.201402191

Yaroslav Khimyak
- Y.Khimyakuea.acuk
- School of Chemistry, Pharmacy and Pharmacology - Professor in Solid-state NMR
- Physical Chemistry and Pharmaceutics - Member
Person: Research Group Member, Academic, Teaching and Research

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Algara-Siller, G., Severin, N., Chong, S. Y., Björkman, T., Palgrave, R. G., Laybourn, A., Antonietti, M., Khimyak, Y. Z., Krasheninnikov, A. V., Rabe, J. P., Kaiser, U., Cooper, A. I., Thomas, A., & Bojdys, M. J. (2014). Triazine-based graphitic carbon nitride: a two-dimensional semiconductor. Angewandte Chemie-International Edition, 53(29), 7450-7455. https://doi.org/10.1002/anie.201402191

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title = "Triazine-based graphitic carbon nitride: a two-dimensional semiconductor",

abstract = "Graphitic carbon nitride has been predicted to be structurally analogous to carbon-only graphite, yet with an inherent bandgap. We have grown, for the first time, macroscopically large crystalline thin films of triazine-based, graphitic carbon nitride (TGCN) using an ionothermal, interfacial reaction starting with the abundant monomer dicyandiamide. The films consist of stacked, two-dimensional (2D) crystals between a few and several hundreds of atomic layers in thickness. Scanning force and transmission electron microscopy show long-range, in-plane order, while optical spectroscopy, X-ray photoelectron spectroscopy, and density functional theory calculations corroborate a direct bandgap between 1.6 and 2.0 eV. Thus TGCN is of interest for electronic devices, such as field-effect transistors and light-emitting diodes.",

keywords = "carbon nitride, graphene, semiconductor, thin films",

author = "Gerardo Algara-Siller and Nikolai Severin and Chong, {Samantha Y.} and Torbj{\"o}rn Bj{\"o}rkman and Palgrave, {Robert G.} and Andrea Laybourn and Markus Antonietti and Khimyak, {Yaroslav Z.} and Krasheninnikov, {Arkady V.} and Rabe, {J{\"u}rgen P.} and Ute Kaiser and Cooper, {Andrew I.} and Arne Thomas and Bojdys, {Michael J.}",

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doi = "10.1002/anie.201402191",

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Algara-Siller, G, Severin, N, Chong, SY, Björkman, T, Palgrave, RG, Laybourn, A, Antonietti, M, Khimyak, YZ, Krasheninnikov, AV, Rabe, JP, Kaiser, U, Cooper, AI, Thomas, A & Bojdys, MJ 2014, 'Triazine-based graphitic carbon nitride: a two-dimensional semiconductor', Angewandte Chemie-International Edition, vol. 53, no. 29, pp. 7450-7455. https://doi.org/10.1002/anie.201402191

TY - JOUR

T1 - Triazine-based graphitic carbon nitride: a two-dimensional semiconductor

AU - Algara-Siller, Gerardo

AU - Severin, Nikolai

AU - Chong, Samantha Y.

AU - Björkman, Torbjörn

AU - Palgrave, Robert G.

AU - Laybourn, Andrea

AU - Antonietti, Markus

AU - Khimyak, Yaroslav Z.

AU - Krasheninnikov, Arkady V.

AU - Rabe, Jürgen P.

AU - Kaiser, Ute

AU - Cooper, Andrew I.

AU - Thomas, Arne

AU - Bojdys, Michael J.

PY - 2014/7/14

Y1 - 2014/7/14

N2 - Graphitic carbon nitride has been predicted to be structurally analogous to carbon-only graphite, yet with an inherent bandgap. We have grown, for the first time, macroscopically large crystalline thin films of triazine-based, graphitic carbon nitride (TGCN) using an ionothermal, interfacial reaction starting with the abundant monomer dicyandiamide. The films consist of stacked, two-dimensional (2D) crystals between a few and several hundreds of atomic layers in thickness. Scanning force and transmission electron microscopy show long-range, in-plane order, while optical spectroscopy, X-ray photoelectron spectroscopy, and density functional theory calculations corroborate a direct bandgap between 1.6 and 2.0 eV. Thus TGCN is of interest for electronic devices, such as field-effect transistors and light-emitting diodes.

AB - Graphitic carbon nitride has been predicted to be structurally analogous to carbon-only graphite, yet with an inherent bandgap. We have grown, for the first time, macroscopically large crystalline thin films of triazine-based, graphitic carbon nitride (TGCN) using an ionothermal, interfacial reaction starting with the abundant monomer dicyandiamide. The films consist of stacked, two-dimensional (2D) crystals between a few and several hundreds of atomic layers in thickness. Scanning force and transmission electron microscopy show long-range, in-plane order, while optical spectroscopy, X-ray photoelectron spectroscopy, and density functional theory calculations corroborate a direct bandgap between 1.6 and 2.0 eV. Thus TGCN is of interest for electronic devices, such as field-effect transistors and light-emitting diodes.

KW - carbon nitride

KW - graphene

KW - semiconductor

KW - thin films

U2 - 10.1002/anie.201402191

DO - 10.1002/anie.201402191

M3 - Article

SN - 1433-7851

VL - 53

SP - 7450

EP - 7455

JO - Angewandte Chemie-International Edition

JF - Angewandte Chemie-International Edition

IS - 29

ER -

Triazine-based graphitic carbon nitride: a two-dimensional semiconductor

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Yaroslav Khimyak

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