Tuning dimensionality in van-der-Waals antiferromagnetic Mott insulators TMPS3

M. J. Coak, D. M. Jarvis, H. Hamidov, C. R. S. Haines, P. L. Alireza, C. Liu, Suhan Son, Inho Hwang, G. I. Lampronti, D. Daisenberger, P. Nahai-Williamson, A. R. Wildes, S. S. Saxena, Je-Geun Park

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Abstract

We present an overview of our recent work in tuning and controlling the structural, magnetic and electronic dimensionality of 2D van-der-Waals antiferromagnetic compounds (Transition-Metal)PS3. Low-dimensional magnetic systems such as these provide rich opportunities for studying new physics and the evolution of established behaviours with changing dimensionality. These materials can be exfoliated to monolayer thickness and easily stacked and combined into functional heterostructures. Alternatively, the application of hydrostatic pressure can be used to controllably close the van-der-Waals interplanar gap and tune the crystal structure and electron exchange paths towards a 3D nature. We collect and discuss trends and contrasts in our data from electrical transport, Raman scattering and synchrotron x-ray measurements, as well as insight from theoretical calculations and other results from the literature. We discuss structural transitions with pressure common to all materials measured, and link these to Mott insulator-transitions in these compounds at high pressures. Key new results include magnetotransport and resistivity data in the high-pressure metallic states, which show potentially interesting qualities for a new direction of future work focussed on low temperature transport and quantum critical physics.
Original languageEnglish
Article number124003
JournalJournal of Physics: Condensed Matter
Volume32
DOIs
Publication statusPublished - 19 Dec 2019

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